With reference to the report published, the global GaN semiconductor devices market was prized by USD 1.44 billion in 2019. It is estimated to witness a 19.8% CAGR from 2020 to 2027.
The enlargement of the market for GaN semiconductor devices can be accredited to the increasing requirement for power electronics, due to their low down expenditure of power plus the greater competence. By the reason of its ability of low down power expenditure plus greater effectiveness, creating it an appropriate material for the production of the power electronic apparatuses, the business professionals expect that gallium nitride will exchange silicon.
The gallium nitride equipment is anticipated to observe major needs in the healthcare division. Hospitals are making use of the robots, prepared by gallium nitride apparatuses, to carry out difficult surgical actions.
On account of their potential to exact positioning, which assists in executing the surgical treatments, scanning tools like sonograms, miniaturized x-ray machines, and Magnetic Resonance Imaging (MRI), makes use of GaN sourced semiconductor components. Furthermore, gallium nitride is anticipated to substitute silicon in medicinal equipment like nerve-muscle simulators and synthetic heart pumps.
The current COVID-19 pandemic has caused lockdown, though some most important markets. This has held back the trade of electronic goods, in addition to, interrupted the supply chains. Furthermore, several nations are suffering a huge loss in earnings, since the production plants hold shut down. In 2020, the general conditions have badly affected the requirement for Gallium Nitride (GaN) semiconductor devices.
In 2019, the 4-inch segment held more than 35% share and led the GaN semiconductor devices market. The development can be due to the reality that 4-inch wafers are reasonable in size plus facilitate the major manufacture of the semiconductor apparatuses. The execution of 4-inch wafers is speedily growing since they conquer the restrictions of 2-inch wafers and discover a broad assortment of functions in semiconductor product-centric manufacturing.
Due to the benefits like accurate current management plus consistent voltage delivery presented by 6-inch wafers, the 6-inch section is likely to enlarge by a major CAGR, during the forecast period. It contains ample functions in defense apparatuses, as well as in consumer electronics due to the profits like low down current leak and greater breakdown voltage.
In 2019, the transistor section held more than 25% revenue share and led the Gallium Nitride (GaN) Semiconductor Devices Market. The increasing implementation of 4G technology-facilitated apparatuses, during the latest days, has caused the growing demand for elevated power GaN sourced transistors, intended for the base stations, utilized in the telecommunication segment. GaN sourced transistors are additionally well-organized plus perform at superior power intensity as well as switch frequency, in contrast to silicon sourced transistors
Because of the rising utilization of GaN sourced power ICs that presents features like instantaneous air traffic control, well-organized navigation, and prevention from collision, the power IC sector is expected to register a momentous CAGR, during the forecast period.
In 2019, Opto-semiconductors held more than 35% revenue share and led the GaN Semiconductor Devices Market. The section is estimated to observe a large expansion, during the forecast period. Mainly, this can be credited to the usage of Opto-semiconductors in the apparatuses like optoelectronics, photodiodes, lasers, solar cells, and LEDs. The automobile division is, gradually more, making use of Opto-semiconductors in pulse power-driven laser, indoor as well as outdoor illumination, and automobile lights.
The GaN radio frequency devices section is anticipated to record a superior CAGR, throughout the forecast period. The expansion of the division can be accredited to the escalating utilization of Gallium nitride radiofrequency apparatuses in a large assortment of functions through the sectors like defense as well as consumer electronics. These are the initial acceptors of GaN semiconductor devices, in the market. Moreover, these apparatuses are utilized in Improvised Explosive Devices (IEDs) since they present superior functioning at reasonable expenses.
In 2019, the Information and Communication Technology (ICT) section held more than 20% share and ruled the Gallium Nitride Semiconductor Devices Market. Mainly, the progress of the section can be credited to the rising acceptance of the technology of Internet-of-Things (IoT).
IoT apparatuses require a proficient and lucrative mechanism that assists in the continuous switch over of information. GaN sourced semiconductors are anticipated to be adequate for the greater competence and low down power expenditure necessities, for the correct working of IoT facilitated instruments.
The rising usage of GaN semiconductor devices in the aerospace & defense segment can be accredited to the increasing necessity for the amplified bandwidth with performance dependability in radars, communications, electronic combat, and others. The ICs utilized in radar panels integrate GaN to facilitate well-organized concurrent air traffic control, navigation, and provide accident prevention.
On account of speedy technical progressions that are the most important to the augmented demand for competent as well as high-performance RF components, Asia Pacific is estimated to come out as the speedily developing market for GaN semiconductor devices, during the forecast period.
The nations like Japan and China are some of the major producers of consumer electronics, like gaming consoles, LED display devices, and smartphones. This performs like an input factor in increasing the enlargement of the provincial market. The growing finances for the defense sector in the nations like India, China, and others, have caused the increasing demand for strong devices used for communication. Moreover, a considerable rise in the acceptance of wireless electronic procedures plus the creation of telecom infrastructure, within the Asia Pacific, is additionally encouraging the expansion of the market.
In 2019, North America held more than 33% share and led the market. The enlargement can be credited to the rising funds by the aerospace as well as defense segment for the research & development. The governments of North America are encouraging the acceptance of power competent devices, along with giving contracts to different companies, working within the state. The ICT division in the province is, progressively more, taking on GaN semiconductors in the field of radiofrequency devices. That encourages the expansion of the market.
The major companies are adopting the policies like a tactical corporation, partnership, and mergers & acquisitions, to obtain the required potential for making GaN source semiconductors, along with the upper share in the market for GaN semiconductor devices.
Such as, Cree, Inc. concluded the acquirement of Advanced Technology Materials Corp. This company is a producer of GaN semiconductor devices. Cree, Inc. expanded its geological attendance in China, by way of this acquirement. The market participants are seriously spending on R&D actions to create a progression in GaN equipment.
• Toshiba Corporation
• Qorvo, Inc.
• NexGen Power Systems
• GaN Systems
• Efficient Power Conversion Corporation
• Texas Instruments Incorporated
• NXP Semiconductor
• Infineon Technologies AG
• Fujitsu Ltd.
• Cree, Inc.
Report Attribute |
Details |
The market size value in 2020 |
USD 1.65 billion |
The revenue forecast in 2027 |
USD 5.85 billion |
Growth Rate |
CAGR of 19.8% from 2020 to 2027 |
The base year for estimation |
2019 |
Historical data |
2016 - 2018 |
Forecast period |
2020 - 2027 |
Quantitative units |
Revenue in USD million, volume in thousand units, and CAGR from 2020 to 2027 |
Report coverage |
Revenue and volume forecast, company ranking, competitive landscape, growth factors, and trends |
Segments covered |
Product, component, wafer size, end-use, region |
Regional scope |
North America; Europe; Asia Pacific; Latin America; MEA |
Country scope |
U.S.; Canada; U.K.; Germany; China; India; Japan; Brazil |
Key companies profiled |
Cree, Inc.; Efficient Power Conversion Corporation; Fujitsu Ltd.; GaN Systems; Infineon Technologies AG; NexGen Power Systems; NXP Semiconductor; Qorvo, Inc.; Texas Instruments Incorporated; Toshiba Corporation |
Customization scope |
Free report customization (equivalent up to 8 analysts working days) with purchase. Addition or alteration to country, regional & segment scope. |
Pricing and purchase options |
Avail of customized purchase options to meet your exact research needs. |
This report forecasts revenue growth at global, regional, and country levels and provides an analysis of the latest industry trends in each of the sub-segments from 2016 to 2027. For this study, Grand View Research has segmented the global GaN semiconductor devices market report based on products, component, wafer size, end-use, and region:
• Product Outlook (Volume, Thousand Units; Revenue, USD Million, 2016 - 2027)
• GaN Radio Frequency Devices
• Opto-semiconductors
• Power Semiconductors
• Component Outlook (Revenue, USD Million, 2016 - 2027)
• Transistor
• Diode
• Rectifier
• Power IC
• Others
• Wafer Size Outlook (Revenue, USD Million, 2016 - 2027)
• 2-inch
• 4-inch
• 6-inch
• 8-inch
• End-use Outlook (Revenue, USD Million, 2016 - 2027)
• Automotive
• Consumer Electronics
• Defense & Aerospace
• Healthcare
• Information & Communication Technology
• Industrial & Power
• Others
• Regional Outlook (Revenue, USD Million, 2016 - 2027)
• North America
• U.S.
• Canada
• Europe
• U.K.
• Germany
• The Asia Pacific
• India
• China
• Japan
• Latin America
• Brazil
• Middle East & Africa
Research Support Specialist, USA